|Title||Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C|
|Publication Type||Conference Paper|
|Year of Publication||2019|
|Authors||Bi C, Lin S-J, Li X, Simsek T, Song M., Tsai W, Wang SX|
|Conference Name||2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)|
|Conference Location||345 E 47TH ST, NEW YORK, NY 10017 USA|
We report our work on the optimization of W/CoFeB/MgO structures to fulfill perpendicular magnetic anisotropy (PMA) requirements in the production of SOT-MRAM. By optimizing the natural oxidization process of deposited Mg layer and introducing different dust layers at W/CoFeB and CoFeB/MgO interfaces, PMA of W/CoFeB/MgO structures can be enhanced by about 100%, which is much higher than that in Ta-based structures. The origin of this PMA enhancement was further confirmed by transmission electron microscopy investigations. The corresponding SOT switching efficiency and current-induced effective fields were also investigated.