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Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C

TitleInterfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C
Publication TypeConference Paper
Year of Publication2019
AuthorsBi C, Lin S-J, Li X, Simsek T, Song M., Tsai W, Wang SX
Conference Name2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
PublisherIEEE
Conference Location345 E 47TH ST, NEW YORK, NY 10017 USA
ISBN Number978-1-7281-0942-8
Abstract

We report our work on the optimization of W/CoFeB/MgO structures to fulfill perpendicular magnetic anisotropy (PMA) requirements in the production of SOT-MRAM. By optimizing the natural oxidization process of deposited Mg layer and introducing different dust layers at W/CoFeB and CoFeB/MgO interfaces, PMA of W/CoFeB/MgO structures can be enhanced by about 100%, which is much higher than that in Ta-based structures. The origin of this PMA enhancement was further confirmed by transmission electron microscopy investigations. The corresponding SOT switching efficiency and current-induced effective fields were also investigated.