Prof. Shan Wang joins JUMP/ASCENT Center led by University of Notre Dame and E3S Center led by UC Berkeley, respectively. Wang Lab and collaborators will work on spin-orbit torque magnetoresistive random access memory (SOT-MRAM), magnetoelectric spin-orbit (MESO) logic, and energy-efficient information storage and computing. The programs place nanomagnetics and spintronics in a multidisciplinary research community with broad impact, and put a premium on novel topological materials, beyond-CMOS devices, and cross-cutting system level applications.
