Fen Xue

About Fen's research on Spintronics Memory and Micro Sensors:

My research experiences in spintronics memory devices are two-terminal spin-orbit torque (SOT) MRAM and voltage control of magnetic anisotropy (VCMA) via enhanced Rashba effect at the interface. Currently, I am working on field-free in-plane SOT switching.

My research in electric-field micro sensors are primarily for the purpose of space electric-field measurement in smart grid. We have proposed different structures, which are based on piezoelectric coupling effect with piezoresistive effect, magnetoresistive effect, or capacitive effect.  Present study focuses on more flexible and applicable electric-field sensors.